LED Materials: Epitaxy and Quantum Well Structures
Jan 1, 2016 · In the experiment herein, measurements and two types of LED emitters were made and analyses performed: one was the blue LED emitter that comprised blue LED chip and clear lenses; the other was the white LED emitter that comprised blue LED chip and yellow phosphor.
(a) Schematic diagram of LED epi-structure, (b) SEM
The reduced efficiency droop for the LED on silicon was attributed to its lower internal electric field, which was confirmed by reverse-bias electro-reflectance measurements and numerical...
The structure of the newly developed LED is shown in Fig. 4. On an LED epi structure, a p-type transparent elec-trode is grown, followed by a p-pad electrode. Optimizing the ratio of the component elements gave us a transparent electrode with low resistivity and good ohmic contact with the p-type GaAs semiconductor layer. A part of the epi layer
World's first monolithic InGaN RGB LED for µLED displays
Jan 31, 2023 · It is a monolithic stacked RGB structure that can drive RGB colours independently. This is regarded as an ideal RGB pixel structure for manufacturing high-resolution micro-displays. Above is a schematic diagram of the RGB LED epi structure ( left …
Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN …
Oct 9, 2024 · This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.
Epi-Growth and Chip Fabrication Process for Micro-LEDs
Jan 4, 2022 · “Micro-LED” means that the dimension of a single LED chip (R, or G, or B) is less than 100 um square. “Micro-LED” also indicates that the thin-film LED chip does not carry any growth or temporary substrate.
III-Nitride LED epi-wafers are typically grown on insulating sapphire substrates. The probing technique we describe here is based on the fact that the sheet resistance of the top p-type GaN cladding layer is much higher (> 103 times) than that of the n-type GaN layer for a typical LED structure [3]. This is a
Fabrication of vertical thin-GaN light-emitting diode by low ...
Feb 1, 2012 · In this study, we fabricate the vertical thin-GaN LED chips with the GaN LED epi-layers grown on the patterned-sapphire substrate and study the effect of the inverted pattern on the performance of the vertical thin-GaN LED.
Structure of the vertical rotating disc type reactor developed by Veeco is shown in Fig. 1.1 [1]. In the reactor, substrates stand on pockets of a wafer carrier.
Enhancement in external quantum efficiency of AlGaInP red μ-LED …
Feb 25, 2021 · The epi structure of μ-LEDs consisted of a GaInP etching stop layer (ESL), n +-AlGaInP contact layer, n-cladding AlInP, AlGaInP active layers including a number of multiple quantum wells...