A single-stage stacked field-effect transistor (FET) linear power amplifier (PA) is demonstrated using 0.28-¿m 2.5-V standard I/O FETs in a 0.13-¿m silicon-on-insulator (SOI) CMOS technology. To ...

A new model of vacuum tube amplifier, designed to produce over 10 Watts at 263 GHz is in development at CPI Canada. This device uses CPI's Extended Interaction Klystron technology, which has ...