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EPC Space has announced the EPC7030MSH, a radiation-hardened 300-V GaN FET for high-voltage, high-power space applications.
A single-stage stacked field-effect transistor (FET) linear power amplifier (PA) is demonstrated using 0.28-¿m 2.5-V standard I/O FETs in a 0.13-¿m silicon-on-insulator (SOI) CMOS technology. To ...
A K-band monolithic microwave integrated circuit (MMIC) transmit and receive (T/R) single pole double throw (SPDT) switch with low insertion loss, high isolation and ultrahigh output power is ...
Field-effect transistors (FETs), when functionalized with proper biorecognition elements (such as antibodies or enzymes), represent a unique platform for real-time, specific, label-free transduction ...
We confirmed that F8Se2 is a thermotropic liquid crystalline polymer with an aligned structure by carrying out DSC, PLM, and XRD measurements. The introduction of the selenophene moiety into the ...
Check out the current traffic and highway conditions at I-77 n/o I-277 / Waterloo Rd in Canal Fulton, OH. Avoid traffic & plan ahead!
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