Foryou Industries Co., Ltd.: The current main businesses are automotive electronics and precision die-casting, with no products supplied for humanoid robots. In February 2025, China's antimony ingot ...
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, China Guangdong Basic Research Center of Excellence for Energy and ...
Another drawback of producing red LEDs on ScAlMgO 4 is the high cost of the substrate. Team spokesman Kazuhiro Ohkawa told ...
Gallium oxide wafers are easier to produce versus GaN (Gallium Nitride) and SiC (silicon Carbide) substrates. But today, gallium oxide is produced on 2-inch wafers, with 6-inch (150mm) substrates in ...
Figure 1. Crystal structure and lattice parameters of AlN. The lattice parameters and bond lengths are taken from (Cunha et al., 2022).
Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, 67100 L’Aquila (AQ), Italy Department of Applied Science and Technology, Polytechnic University of Turin, Corso ...
Smales, A. A., and Wager, L. R., “Methods in Geochemistry” (Interscience Publishers, 1960).
A new technical paper titled “Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam and extreme ultraviolet exposure” was published by researchers at UT ...
Detecting infrared light is critical in an enormous range of technologies, from remote controls to autofocus systems to self-driving cars and virtual reality headsets. That means there would be ...
Nature Research Intelligence Topics enable transformational understanding and discovery in research by categorising any document into meaningful, accessible topics. Read this blog to understand ...
Our advanced engineering and manufacturing services include creating and testing photonic devices, working with materials such as indium phosphide, gallium arsenide and gallium nitride ... the ...
One is the gallium-nitride based. That’s gallium nitride ... “Within a typical commercial VCSEL structure, one utilizes a combination of materials such as GaAs, indium-gallium-arsenide (InGaAs), ...