Ghislain Despesse, Research Director at CEA-Leti, explains how, building on its earlier breakthroughs introducing a new way ...

Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package ...

Mitsubishi Electric will invest approximately $64m (10 billion yen) to construct a new facility for the assembly and ...

GlobalFoundries and the US Department of Commerce have announced an award of up to $1.5 billion in direct funding to GF ...

Toshiba Electronics Europe has introduced a new gate driver IC series for three-phase brushless DC (BLDC) motors used in ...

STMicroelectronics has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS (th)), combining the ...

Infineon has announced the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS (on) ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in drive-motor inverters of electric ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, has opened its North American ...