electronics360.globalspec1d
Infineon advances 300 mm GaN power wafer technology
Infineon Technologies AG has progressed in its development of what it claims is the first 300 mm gallium nitride (GaN) power ...
Interesting Engineering on MSN1mon
Infineon unveils world’s first 300 mm power gallium nitride wafer technology
A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer ...
EurekAlert!22d
Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
resulting in the successful fabrication of high-quality GaN epilayers at the wafer scale. (2) A highly controllable roughening process combined with atomic-level sidewall passivation treatment is ...
Infineon aims to grab market shares with new GaN wafer technology
Infineon said it will further scale GaN capacity aligned with market needs. The company estimates that the growing GaN market ...
Digi Times8d
Infineon unveils ultra-thin 20-micrometer power semiconductor wafer
Infineon Technologies has disclosed its latest milestone in semiconductor manufacturing technology, following the announcement of the world's first 300-millimeter GaN power wafer and the inauguration ...
Business Wire1mon
Atomera Collaborates With the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories to Validate MST’s Ability to Address GaN Manufacturing Challenges
This project aims to create the world’s first GaN transistors and test data from wafers employing Atomera’s Mears Silicon Technology™ (MST®). The effort will build upon improvements already ...