Gallium-nitride power designs have triple the power of silicon with half the weight and size, plus the added bonus of 20X the ...

Navitas GaNSafe GaN power semiconductors offer more power in a thermally-enhanced TOLT package for high-power applications.

We have developed an integrated, 10 GHz active gate driver for GaN FETs. It is the first chip to output an arbitrary waveform during the short time in which a GaN FET switches. The chip does this by ...

For example, when the GaN FET is turned on, the current would ideally jump instantaneously to the full load current. ‌However, the hotter a GaN devices gets, the slower this transition becomes. Here, ...

Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package ... 650 V GAN039-650NTB, and the bottom-cooled variant, GAN039-650NBB of the same RDS(on). Malicious vote manipulation is ...

There is another family of transistors which have analogous circuit configurations to their bipolar cousins but work in a completely different way: the Field Effect Transistors, or FETs.

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs ...

Across the LGBTQ+ community, jokes about ‘top energy’ and ‘bottom energy’ are rife. For lesbians and queer women in particular, we often hear talk of ‘pillow princesses’ and ‘doms ...

the PWM controllers provide a circuit current of 2.0 mA, a maximum startup current of 75 µA, and a maximum duty cycle of 50%. The lineup will be expanded to include products for driving GaN devices ...

Physics, status, and prospects” was published by researchers at UC Santa Barbara. “In this work, we explore the physics and ...